CPH6516 no.7403-1/3 features ? composite type with 2 transistors and in the cph package currently in use, improving the mounting efficiency greatly. ? the CPH6516 is formed with two chips, being equivalent to the 2sa1745, placed in one package. ? low collector to emitter saturation voltage. ? excellent in thermal equilibrium and pair capability. electrical connection sanyo electric co.,ltd. semiconductor company tokyo office tokyo bldg., 1-10, 1 chome, ueno, taito-ku, tokyo, 110-8534 japan ordering number : enn7403 CPH6516 package dimensions unit : mm 2212 [CPH6516] pnp epitaxial planar silicon composite transistor specifications absolute maximum ratings at ta=25 c parameter symbol conditions ratings unit collector-to-base voltage v cbo --20 v collector-to-emitter voltage v ceo --15 v emitter-to-base voltage v ebo -- 5 v collector current i c --500 ma collector current(pulse) i cp -- 1 a base current i b --100 ma collector dissipation p c 1unit 350 mw total dissipation p t 500 mw junction temperature tj 150 c storage temperature tstg --55 to +150 c electrical characteristics at ta=25 c ratings parameter symbol conditions min typ max unit collector cutoff current i cbo v cb =--15v, i e =0 --0.1 m a emitter cutoff current i ebo v eb =--4v, i c =0 --0.1 m a note : the specifications shown above are for each individual transistor. continued on next page. marking : 3a any and all sanyo products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life-support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. consult with your sanyo representative nearest you before using any sanyo products described or contained herein in such applications. sanyo assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo products described or contained herein. 22004 ts im ta-100339 0.05 0.9 0.7 0.2 1.6 0.6 0.6 0.95 1 23 6 5 4 2.8 0.2 2.9 0.15 0.4 1 : base 1 2 : emitter 1 3 : collector 2 4 : emitter 2 5 : base 2 6 : collector 1 sanyo : cph6 low-frequency general-purpose amplifier applications b1 e1 c2 c1 b2 e2 (top view) tr2 tr1
CPH6516 no.7403-2/3 continued from preceding page. ratings parameter symbol conditions min typ max unit dc current gain h fe 1v ce =--2v, i c =--10ma 160 560 h fe 2v ce =--2v, i c =--400ma 70 dc current gain ratio h fe (small / v ce =--2v, i c =--10ma 0.8 0.98 large) gain-bandwidth product f t v ce =--2v, i c =--50ma 400 mhz output capacitance cob v ce =--10v, f=1mhz 6.5 pf collector-to-emitter saturation voltage v ce (sat)1 i c =--5ma, i b =--0.5ma --15 --35 mv v ce (sat)2 i c =--200ma, i b =--10ma --200 --360 mv base-to-emitter saturation voltage v be (sat) i c =--200ma, i b =--10ma --0.95 --1.2 v collector-to-base breakdown voltage v (br)cbo i c =--10 m a, i e =0 --20 v collector-to-emitter breakdown voltage v (br)ceo i c =--1ma, r be = --15 v emitter-to-base breakdown voltage v (br)ebo i e =--10 m a, i c =0 --5 v --1.0 --10 57 23 57 --100 57 23 57 23 3 2 3 5 7 --100 --10 2 5 7 --1000 2 3 5 0 --0.4 --0.8 --1.2 --1.6 --2.0 --40 --80 --120 --160 --200 0 --100 --200 --300 --400 --500 --600 0 i c -- v ce itr10434 i b =0 0 --0.2 --0.4 --0.6 --0.8 --1.0 --1.2 --1.4 i c -- v be itr10435 100 1000 7 5 3 2 7 5 3 2 --1.0 --10 57 23 --100 57 23 57 23 --10 57 --100 57 23 5 23 h fe -- i c itr10436 ta=75 c --25 c 25 c ta=75 c --25 c v ce = --2v v ce = --2v v ce = --2v --0.4ma --0.2ma --0.6ma --0.8ma --1.0ma --1.2ma --1.4ma f t -- i c itr10437 5 2 3 5 7 1000 100 7 2 --1.0 57 --10 57 23 23 1.0 2 3 5 7 10 2 3 5 v ce (sat) -- i c itr10439 i c / i b =20 ta=75 c --25 c cob -- v cb itr10438 f=1mhz 25 c 25 c output capacitance, cob -- pf collector-to-base voltage, v cb -- v collector current, i c -- ma collector-to-emitter saturation voltage, v ce (sat) -- mv collector current, i c -- ma dc current gain, h fe collector current, i c -- ma gain-bandwidth product, f t -- mhz collector-to-emitter voltage, v ce -- v collector current, i c -- ma base-to-emitter voltage, v be -- v collector current, i c -- ma
CPH6516 no.7403-3/3 specifications of any and all sanyo products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer's products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer's products or equipment. sanyo electric co., ltd. strives to supply high-quality high-reliability products. however, any and all semiconductor products fail with some probability. it is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire, or that could cause damage to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. in the event that any or all sanyo products(including technical data,services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of sanyo electric co. , ltd. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equipment, refer to the "delivery specification" for the sanyo product that you intend to use. information (including circuit diagrams and circuit parameters) herein is for example only ; it is not guaranteed for volume production. sanyo believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties. this catalog provides information as of february, 2004. specifications and information herein are subject to change without notice. ps --1.0 --10 57 23 57 --100 57 23 57 23 5 2 3 5 7 --10 --1.0 3 7 v be (sat) -- i c itr10440 i c / i b =20 ta= --25 c 75 c 25 c collector dissipation, p c -- mw ambient temperature, ta -- c collector current, i c -- ma base-to-emitter saturation voltage, v be (sat) -- v it05367 p c -- ta it05368 100 200 300 350 400 500 600 0 0 175 125 150 100 75 50 25 a s o 100ms dc operation ta=25 c 1ms 10ms i cp = --1.0a i c = --0.5a 2 2 3 5 7 2 3 5 7 --1.0 --0.1 --0.01 23 57 23 57 2 --0.1 --1.0 --10 3 100 m s 1unit collector-to-emitter voltage, v ce -- v collector current, i c -- a total dissipation
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